Here is the abstract you requested from the Thermal_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Metallic Thermal Interface and Die Attach Materials for IGBT Power Semiconductor Modules|
|Keywords: Thermal, IGBT , Solder|
|Solder, shims, and metallic performs have been available for applications for power semiconductor and RF device applications. Development of new forms of materials for use internally in IGBT and RF device module fabrication and for use as thermal interface materials address several needs for package thermal performance and package reliability. Power semiconductor and RF device design includes the continued use of wire bonding, including aluminum wire and ribbon, and internal module construction which are significantly different from integrated circuit packaging. Package reliability for selected power semiconductor markets requires lifetimes of up to thirty years in operation; material selection at every level within a module is critical to understanding and controlling failure mechanisms. Developments of new forms of metallic thermal materials will be discussed in this presentation, focused on power semiconductor (IGBT and RF) package requirements and applications.|
|Amanda Hartnett, Applications Engineer