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AuSi and AuSn Eutectic Die Attach Case Studies from Small (12 mil) to Large (453 mil) Die
Keywords: AuSi Eutectic Die Attach, AuSn Eutectic Die Attach, RF Package
High power transistor, laser, and LED devices require packaging to remove the thermal energy from the chip. Materials such as Si and GaAs on CuW and GaN on SiC will be discussed for die size ranges of 12 x 21 x 4 mil thick to 543 x 274 x 12 mil thick with AuSi or AuSn eutectic die attach. Die thicknesses down to 50um thick are demonstrated in the case studies as well as an overview of material selection and the processes for optimized eutectic attach. Bond quality metrics such as fillet, voiding, and shear will also be covered in this paper.
Daniel D. Evans, Jr., Senior Scientist / Applications Manager
Palomar Technologies, Inc.
Carlsbad, CA

  • Amkor
  • ASE
  • Canon
  • Corning
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Rochester Electronics
  • Specialty Coating Systems
  • Spectrum Semiconductor Materials
  • Technic