Here is the abstract you requested from the IMAPS_2010 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|AuSi and AuSn Eutectic Die Attach Case Studies from Small (12 mil) to Large (453 mil) Die|
|Keywords: AuSi Eutectic Die Attach, AuSn Eutectic Die Attach, RF Package|
|High power transistor, laser, and LED devices require packaging to remove the thermal energy from the chip. Materials such as Si and GaAs on CuW and GaN on SiC will be discussed for die size ranges of 12 x 21 x 4 mil thick to 543 x 274 x 12 mil thick with AuSi or AuSn eutectic die attach. Die thicknesses down to 50um thick are demonstrated in the case studies as well as an overview of material selection and the processes for optimized eutectic attach. Bond quality metrics such as fillet, voiding, and shear will also be covered in this paper.|
|Daniel D. Evans, Jr., Senior Scientist / Applications Manager
Palomar Technologies, Inc.