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Advanced Thin Wafer Support Processes for Temporary Wafer Bonding
Keywords: thin wafer handling, temporary wafer bonding, temporary bonding adhesives
Wafer-to-wafer bonding is widely used to support both the production of integrated circuits and MEMS devices. Bonding may be accomplished in a variety of ways including anodic, thermal compression, and adhesive bonding. The bond may be either permanent or temporary. Permanent wafer bonding is used to combine two materials together that remain together for the life of the device, for example, in the production of Si/GaAs wafer heterostructures for integration of an optoelectronic device into silicon integrated circuit technology. Temporary bonding is used to support the device wafer during certain processing steps, and then removed once the device wafer is completed. Currently, there are several temporary bonding processes being developed in industry. The leading technology utilizes some form of polymeric material to temporarily fasten or bond a rigid backing material, usually silicon or glass, to the device wafer for processing. The main issues associated with these techniques are temperature stability of the adhesive through backside processing, removal of the fragile device wafer from the support wafer, and cleaning the adhesive from the device wafer. This paper will cover advancements in techniques associated with solving these issues. Included are methods for encapsulating and eliminating voids in the temporary bonding materials around microelectronic features, such as, solder bumps. Information will be reported on methods to handle higher temperatures and increased stress in thin wafer processes while maintaining the ability to debond with low stress and temperature. Studies on post debond cleaning will also be discussed.
Jeremy W. McCutcheon, 3DP R&D Division Manager
Brewer Science, Inc.
Rolla, MO
USA


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