Here is the abstract you requested from the Thermal_2010 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Trends and Developments for IGBT Module Packaging and Thermal Materials|
|Keywords: packaging, power, semiconductor|
|Power semiconductor modules include both discrete and multichip packaging and a wide range of packaging materials are utilized for current module manufacturing. Developments in the use of silicon carbide and gallium nitride as the semiconductor material, replacing the silicon die used today, are making substantial strides towards wider system implementation. Drivers for the development of these newer wafer materials include higher reliability, higher operating temperatures at the die level, reduction in size, and higher frequency operation. These requirements also impact the thermal and packaging materials used in manufacturing such modules. This presentation will endeavor to present market requirements and trends for: • Baseplate materials • Solder and low-temperature joining materials and processes • Dielectric and substrate materials within modules • Gels and other protective and enclosure materials • Wirebond, ribbon bond, and related die metallization requirements Recent announcements by power semiconductor manufacturers worldwide illustrate the developing needs for new materials in this market. A set of references for recent announcements will be included.|
|David L. Saums, Principal