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The Use of Infrared Imaging Microscope in the Measurement of Total Thermal Resistance of Vertically Aligned Carbon Nanotube Arrays
Keywords: Infrared Microscopy, Vertically Aligned Carbon Nanotube Arrays, Thermal Interface Materials
The continued reduction of resistance of thermal interface materials (TIM) continues to be a major challenge in thermal management of microscale devices. Current state-of-the-art materials have produced resistances in the range of 5-10 mm2•K/W. It is an ongoing research goal to either infuse highly conductive additives to current materials, or to introduce highly conducting nano-structures such as carbon nanotube (CNT) arrays to further reduce interfacial resistance between surfaces. As the thermal resistance values continue to decrease, new measurement methods most be employed to give both accurate and timely results. Infrared Imaging Microscopy was employed as an effective tool in the measurement of the total resistance CNT arrays on different substrates. These measurements have included single sided transferred arrays which use the growth silicon substrate as one of the primary matierals in the package in addition to double sided transferred arrays which seperates the CNT from the native substrate and are then bonded to two distinct materials. This presentation will describe the measurement setup, and compare it with other steady state and transient techniques including laser flash measurements. Discussion regarding run-to-run variability using the same sample and variability of sampling position will be considered. Furthermore, preliminary results regarding total resistance values for CNT arrays, which are comparable to modern materials, will be provided.
Andrew J. McNamara, Student
Georgia Institute of Technology
Atlanta, GA

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