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|Chemical Solution Deposition of High-quality SrRuO3 Thin Film Electrodes and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films|
|Keywords: sol gel, dielectric properties, Strontium Ruthenium Oxide (SrRuO3), polycrystalline thin films|
|High-quality polycrystalline strontium ruthenium oxide (SrRuO3) thin film electrodes were deposited on silicon and nickel substrates by chemical solution deposition. Differential thermal analysis (DTA) of the precursor solution was carried out to identify the pyrolysis and crystallization temperatures. The effect of various crystallization temperatures on the phase, microstructure and electrical properties of the SrRuO3 films were investigated. X-ray diffraction patterns revealed the absence of any undesired phase like ruthenium oxide (RuO2) in the films made using this solution chemistry. Dense, uniform microstructure with grain size < 100nm was observed in the films crystallized between 700 and 750oC. The room-temperature resistivity of the SrRuO3 films crystallized at 700oC was ~800-900 -cm on silicon (100) substrates. The dielectric properties of sol-gel derived PLZT thin film capacitors on polycrystalline SrRuO3 electrodes deposited on silicon and nickel substrates were evaluated to demonstrate the high quality of the formed SrRuO3 bottom electrode and its compatibility with different substrates. Device quality dielectric properties were measured on PLZT films deposited on SrRuO3 buffered silicon and nickel substrates and are comparable to that on expensive platinized silicon. Temperature and frequency dependent dielectric properties were also evaluated to check the integrity of the bottom electrode.|
|Manoj Narayanan, Assistant Materials Scientist
Argonne National Laboratory