Here is the abstract you requested from the CICMT_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|New Perovskite Nanomaterials and their Integration Technologies for High-K Dielectrics|
|Keywords: Perovskite nanosheet, solution-based assembly, high-k nanodielectrics|
|We report a new approach to produce robust high-k nanodielectrics using perovskite nanosheet (Sr2-xCaxNb3O10), a new class of nanomaterials that are derived from layered compounds by exfoliation. By solution-based bottom-up approach using perovskite nanosheets, we have successfully fabricated multilayer nanofilms directly on various substrates without any interfacial dead layers. These nanofilms exhibit high dielectric constant (200~240), the largest value seen so far in perovskite films with the thickness down to 10 nm. Furthermore, the superior high-k properties are a size-effect-free characteristic with low leakage current density (< 10-7 A cm-2). Our work represents a step towards bottom-up paradigm for future high-k devices.|
|Minoru Osada, Senior Researcher
National Institute for Materials Science
Tsukuba, Ibaraki 305-0044,