Here is the abstract you requested from the DPC_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Laser Technology for Through-Silicon Via and Microvia Drilling in Silicon for 3D Packaging Applications|
|Keywords: Laser Micromachining, Through-Silicon-Via (TSV), Silicon Micromachining|
|Presented here are laser processes for drilling debris-free and recast-free vias in silicon that are suitable for subsequent process integration. The process strategy consists of an integrated laser via drill system combined with an isotropic dry etch system. By careful selection of both the laser and etch process parameters it is possible to control the via depth, diameter, sidewall slope/taper, and to eliminate the damaged Si material in the laser heat affected zone. Because the etch process is highly selective to Si, this is a mask-free and cost-effective process. Two different laser processes are demonstrated. For Part 1 we demonstrate a process for TSVs with diameters in the range of 50-250 um for <500 um thick Si wafers. For Part 2 we demonstrate a process for blind vias in Si stopping on a metal layer with diameters ≤50 um for ≤50 um thick Si wafers.|
|Andy Hooper, Research Scientist