Micross

Abstract Preview

Here is the abstract you requested from the DPC_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Realization of Power Modules by Chip Embedding Technology
Keywords: Embedded Die, Power component packaging, System in a package
The continuous miniaturization of silicon dies and the need for a further package size reduction, with an equal or better performance and reduced manufacturing cost, are the main drivers for new packaging concepts. The embedding of active and passive components offers a wide range of benefits and potentials. With the use of laminate based technology concepts, components can be moved from surface mount into the build-up layers of substrates by embedding and by that, the third dimension will be available for further layers or assemblies. This paper will briefly discuss the necessary process steps of the embedded chip technology, which is based on printed circuit board manufacturing processes, and will also demonstrate the transfer of the technology from a smaller size lab scale equipment environment to an industrial comparable process line, capable of processing large panel formats up to 18” x 24”. The paper will also briefly describe this development and categorize today's embedding technologies. First modules with embedded chips are in production in Asia, mainly for telecom and computer applications. In Europe embedding has gained a strong interest for power modules, especially in automotive applications. Main drivers are the capability for compact and thin packaging, the high reliability and cost saving potential. In a number of European cooperation projects with partners from industry and research, embedding of power chips, like IGBTS and power MOSFET, is of high interest. In this paper current achievements of these projects will be shown, especially examples of realized devices and their characteristics. The dominating technology for power chip embedding is a face-up technology. Chips are bonded with their backside (drain contact) to a Cu substrate using highly conductive adhesive or solder. Using the face up assembly, a direct contact to the backside of the die is possible, allowing a lot of benefits for driving high currents and applying an efficient thermal management for the power devices. Then Chips are embedded by vacuum lamination of prepreg or RCC (resin coated copper) layers. Via holes to the top contacts (gate and source) are formed by laser drilling. The vias are metallized using conventional Cu plating. Finally conductor structures are etched in the top Cu layer, finalizing the circuit. Details will be given about device manufacturing, related yield issues and strategies to overcome them. Finally scenarios for the implementation of embedding technology and concepts for future applications will be discussed.
Lars Boettcher, R&D Engineer
Fraunhofer IZM Berlin
Berlin 13355,
Germany


CORPORATE PREMIER MEMBERS
  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • NGK NTK
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems