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Low-Cost and High Throughput PR Stripping Solutions for Bumping Processes
Keywords: Bumping, Photoresist, Stripping
Cleaning processes may account for up to 25% of all steps in the manufacture of a microelectronic device. While producing a semiconductor device may be chemical intensive, it is becoming more common to design for ESH with materials and processes that reduce costs. According to the 2009 ITRS, ESH strategies include the reduction of chemical exposure, usage, and waste. These efforts produce a safer working environment, or green factory, and may one day be certified similar to LEED in the building industry. One simple way to move towards these objectives and save over 50% in costs is by reducing organic solvents. By convention, negative-tone resist removal processes for bumping use a range of solvents with additives to dissolve and rinse away the polymer. Reducing or eliminating solvents can result in improved safety and throughput measured in minutes, not hours, depending upon the type and condition of the resist. These systems can achieve performance and selectivity at temperatures 20-40 C below that of organic solvents while eliminating intermediate steps and pre-rinsing prior to DIW. Converting this to throughput, improvements are measured to be increased by factors up to 5 or greater, reducing exposure to sensitive dielectric materials, and reducing waste generation. Systems that reduce or eliminate solvents must maintain certain fundamental physical-chemical properties. Surface tensions below 35 dynes/cm provide small geometry penetration, particle removal, and sheet rinsing while foaming is in check. Aggressive spraying, bubbling, or other agitation minimizes reaction time. Concentrates may be used to bring superior performance, eliminate solvents and their associated wastes, while reducing costs. Demonstrations of performance, selectivity, chemistry, inhibitors, and details of cost reduction will be discussed.
John Moore, President
Daetec, LLC
Camarillo, CA
USA


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