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Hetero-Structure Integration using an Atmospheric Plasma Treatment for Surface Preparation before its Interconnection
Keywords: Hetero-structure integration, hybrid interconnections, surface activation
One of the open challenges, related to the heterogeneous devices stacking, is its surface preparation, in order to assure the optimal electrical connections, and finally achieve the high performance structures having the stacked chips and passive components. Several techniques, using dry or wet process, allow the surface activation and preparation before the successive vertical interconnection achievement. We report the implementation of an environment friendly method, developed for chips and passive circuits surface preparation before its interconnection. This method is based on the use of atmospheric-pressure plasma source generating the radicals flux in the nitrogen or noble gases, mixed with a small volume of reactive gases, in order to stimulate the surface reactions. The surface properties of various treated materials were characterised by water drop contact angle, FTIR and TXRF method. The results of these behaviours allow defining a dedicated flow chart, in order to apply this surface treatment for the self-positioning of small silicon chips on the connection pads of printed passive circuits. Optimised process was applied to the silicon ICs chips assembly on the flexible polymeric substrates with passive devices; furthermore the treatment potentiality was also proved for other type of substrates and materials used for hetero structure integration. The application example given in this study concerns a novel approach of FRID tag assembly.
Barbara Charlet, Researcher, Dr
Grenoble, Isère 38054,

  • Amkor
  • ASE
  • Canon
  • Corning
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems
  • Technic