Here is the abstract you requested from the HiTEN_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Thin Film Multichip Packaging for High Temperature Digital Electronics|
|Keywords: High Temperature, Thin film module, Assembly|
|Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is physically deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD nitride is used for the dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 300oC. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300oC operation, AlN is used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Aging and thermal cycling data will be presented.|
|R. Wayne Johnson, Professor