Abstract Preview

Here is the abstract you requested from the HiTEN_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Development of a Silicon Nitride High Temperature Power Module
Keywords: High Temperature, Power, Packaging
Silicon nitride has higher fracture strength than alumina and aluminum nitride. The coefficient of thermal expansion (CTE) of Si3N4 is ~2.9ppm/oC and the thermal conductivity ranges from 20-50W/m-K. Active metal brazed Cu-Si3N4 substrates are commercially available for power modules. However, the large mismatch in CTE between Si3N4 and Cu results in ceramic fracture and delamination with wide temperature range thermal cycling. In this work Cu-Carbon and Cu-Mo metal matrix composites have been investigated to reduce the CTE mismatch. The process details and results are presented along with finite element modeling of the as-built structure.
R. Wayne Johnson, Professor
Auburn University
Auburn, AL

  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems