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High Temperature Silicon Carbide CMOS Integrated Circuits
Keywords: High temperature, Silicon carbide, Integrated circuits
The wide band-gap of Silicon Carbide makes it a material suitable for high temperature IC's [1], potentially operating up to 450°C. The maximum operating temperature achieved will depend on the transistor technology selected, interconnect metallisation and device packaging. This paper describes transistor and circuit results achieved in SiC CMOS technology, where the major issue addressed is the gate dielectric performance. n and p-channel transistor operation have been demonstrated up to 400°C [2]. Test circuit functions to be used for further characterisation and application demonstrations include basic logic primitives such as Inverter, NAND, NOR and XOR gates and D-types. Higher level analogue functions such as operational amplifiers and gate drives will also be explored. This technology will be initially applied in: signal conditioning for sensors and; control of SiC based power switching devices, the high temperature capability matching the emerging capabilities of SiC power devices. Acknowledgments HiTSiC is part funded by the UK Technology Strategy Board under ‘Materials for Energy' funding. Raytheon UK is collaborating with the University of Strathclyde (UoS) on the project with the UK's Engineering and Physical Sciences Research Council funding UoS' participation. References [1] Zetterling C-M, Process Technology for Silicon Carbide Devices, IEE, London (2002). [2] D.T. Clark et. al., “High Temperature Silicon Carbide CMOS Integrated Circuits,” ECSCRM2010, Oslo, 2010.
David Clark, Principal Development Engineer
Raytheon Systems Limited
Glenrothes, Fife KY7 5PY,
UK


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