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|>1200 V, >50A Silicon Carbide Super Junction Transistor|
|Keywords: Silicon Carbide, Switch, Power Semiconductor|
|The high-temperature (> 200 °C) blocking voltage, on-state and switching performance of recently fabricated 1200 V-class, 4H-SiC Super Junction Transistors (SJT) will be presented in this paper. The SiC SJT developed by GeneSiC is a Normally-OFF, Gate oxide-free transistor, which can be operated in a Gate-voltage or Gate-current control mode. Unlike competing SiC transistor technologies, the Super Junction Transistor is designed to successfully exploit many superior properties of 4H-SiC resulting in operating temperatures > 250 ° C, high DC figure of merit (VB2/ron,sp), and ultra-fast switching transients. The SJT avoids the gate-oxide reliability issues associated with MOSFETs, especially at high temperatures and yet provides superior on-state characteristics over normally-ON SiC JFETs, especially at temperatures in excess of 150 °C. In this work, SJTs with chip areas of 4 mm2 and 16 mm2 were fabricated. Nearly temperature independent Drain-Source blocking voltages as high as 1400 V and Drain-Gate blocking voltages as high as 1650 V were measured on the fabricated SJTs up to temperatures as high as 250 °C. A modest increase in the device on-resistance from 5.8 mΩ-cm2 at 25 °C to 9.5 mΩ-cm2 at 200 °C was recorded. For a 4 mm2 SJT, a Drain current of 9.8 A required minimum Gate input currents of 125 mA and 200 mA at 25 °C and 175 °C, respectively. The SJT provides a desirable normally-OFF circuit operation, with a + 2.65 V Gate threshold voltage at 25 °C, which decreases to + 2.3 V at 200 °C. Detailed results from high-temperature electrical characterization of the SJTs including switching performance after packaging and demonstration of an inductively loaded chopper circuit with SiC SJTs will be presented in the full paper.|
|Ranbir Singh, President
GeneSiC Semiconductor Inc.