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Optimizing the Performance of the Au-Si System for High Temperature Die Attach Applications
Keywords: die attach materials, Au-Si, reliability
The operation of electronic packages under exceptionally harsh environments presents a significant challenge for the microelectronics industry, for example, in down-hole, well-logging and turbo-machinery. High temperature Au based solders is one potential candidate for this purpose. The Au-Si system is very promising as die attach material and is already used in limited cases. For Au-Si die bonding, the Si is provided from the chip. Therefore, the interfacial reaction between the Si and Au-Si is a key factor for the control of the die bonding process. During the die bonding process, defects such as voids, delaminations, and impurities are not unusual. These defects are caused by many reasons, such as the assembly process, chemical impurities, soldering reaction, and thermal stress. Therefore, understanding these defects is critical for the reliable performance of the devices after bonding. Bond quality inherently variable was under study. Reliability was investigated by ageing at 250oC and 300oC, thermal shock and thermal cycling treatments. Scanning acoustic microscopy (SAM) was used for bonded area assessment. The failure behaviour of the die attach materials included voiding and delamination. Shear strength testing, fractography and microstructural analysis were also carried out. Finite element modelling has also been used to help explain the reliability performance.
Micaela. F. Sousa, Ph.D.Student
Oxford University
Oxford, Oxfordshire OX5 1PF,
United Kingdom

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