Micross

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An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS
Keywords: PROM, SOI, Memory
Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.
Marshall Soares, VP of Engineering, RelChip
Novatek
Provo, UT
USA


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