Here is the abstract you requested from the HiTEN_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS|
|Keywords: PROM, SOI, Memory|
|Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.|
|Marshall Soares, VP of Engineering, RelChip