Here is the abstract you requested from the IMAPS_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Mold Compound Adhesion Reliability with SiN and SiON Passivation Surfaces|
|Keywords: adhesion, mold compound, package reliability|
|Thermo - mechanical reliability of packaged IC's is one of the major concerns regarding device reliability. Some of these reliability issues are often triggered by delamination occurring at material interfaces, among which mold compound to passivation adhesion is of paramount importance. Delamination of mold compound under thermal stress conditions (AATC -55˚C -125˚C) was studied for two passivation surfaces; SiN and SiON using C-Mode Scanning Acoustic Microscope (CSAM) and electrical testing for different intervals up to 2000 cycles. Both passivation surfaces were treated with oxygen-argon plasma prior to the molding process. It is found that SiN surface performed better than SiON without showing any delamination for the mold compound studied. Surface groups play an important role in adhesion of mold compounds. Both passivation surfaces were analyzed for various surface groups by TOF-SIMS analysis immediately before and after the pre-mold plasma treatment process. Different surface groups such as CH, NH etc. were identified, but the major difference was found in the OH intensity. Fraction of OH is significantly increased after plasma treatment for SiN surface while it is decreased for SiON surface. It is inferred that OH group can play a role in enhancing the mold compound-passivation adhesion and hence provide better delamiantion resistance. AATC reliability results of packaged dies with the two passivations and TOF-SIMS surface analysis will be discussed in this paper.|
|Varughese Mathew, Principal Staff Scientist
Freescale Semiconductor, Inc.