Here is the abstract you requested from the IMAPS_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Build-Up Electrical Insulation Material with Low-Dielectric Loss Tangent, Low-CTE and Low-Surface Roughness|
|Keywords: build-up electrical insulation material, low dielectric loss tangent, low surface roughness|
|With the increasing speed of information and communications equipment in recent years, together with high-speed signal processing of LSIs, there is a requirement for build-up electrical insulation materials, used in IC package substrates, to have low-dielectric loss tangent reducing the dielectric loss to achieve low transmission loss in the high-frequency GHz bands. At the same time, there is an increasing need for the materials to have low-CTEs (Coefficient of Thermal Expansion) to ensure highly reliable substrates. With our formulation technology, we have developed a next-generation film-shaped build-up electrical insulation material compatible with high-frequency signal transmission by using composition of practical thermosetting epoxy resin, that has realized both a low-dielectric loss tangent and a low-CTE at the same time. In addition, this material can show a low-surface roughness after the film desmear process. It is thus expected to help reduce not only the dielectric loss by low-dielectric loss tangent but also the conductor loss caused by the skin effect, and promote the fine line formation by SAP (Semi Additive Process). The developed material has a dielectric loss tangent of 0.006 at a frequency of 5.8 GHz and is stabilized independent of frequencies between 1 to 20 GHz. Furthermore, copper traces have been formed by SAP which verified that extremely fine line and space of copper L/S = 5/5um (copper thickness of 10um) can be formed. Finally, it was confirmed that the material has low dielectric loss using the strip line configuration because of the low dielectric tangent and low surface roughness and no ion migration between copper traces of L/S = 5/5 um after HAST (Highly Accelerated Stress Test) was seen confirming a high reliability of electrical insulation.|
|Isao Suzuki, Isao
Sekisui Chemical Co., Ltd.
Tsukuba-City, Ibaraki-Prefecture 300-4292,