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Design of the Bonded Wire Location at the Insulated Gate Bipolar Transistor Module
Keywords: Insulated Gate Bipolar Transistor, thermal-electric analysis, current crowding
The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal semiconductor device, which has lower power dissipation and faster switching characteristics. Due to its great electric behavior, the IGBT is widespread used for many electric devices, including mobile vehicles, electronic ovens and other high power applications. The performance of IGBT, however, is affected by its operation temperature; thus, it is recommended that the IGBT module works at lower temperatures to maintain the fast switch speed and low switch loss attributes. On the other hand, applying large current under higher operation temperature might facilitate the electromagration effect which occurs at the connected wire and then lead to device's early failure. The current crowding region in the IGBT device would have higher temperature because of its larger heat generation rate per volume. How to reduce the crowding current becomes one of the major issues in the IGBT module design. In this study, a transient electro-thermal finite element analysis would be accomplished by using commercial software ANSYS. Some parameters, including different wire diameters, the location of bonded wires, and the number of wires would be chosen to discuss the current density distribution of this IGBT device. The results indicated that the crowding current occurred around bonded wire and the magnitude of current density was direct proportion to the bonded area. In addition, the crowding current can be reduced when the location of the bonded wire is close to the center of the aluminum pad. The maximum junction temperature, however, will also occur at the center of the IGBT chip and might lead to the electromigration behavior. Considering the maximum junction on chip and the crowding current near the bonded wire, an optimal location of the bonded wire will be discussed in this paper.
Shih-Ying Chiang, Ph.D. Student
National Tsing Hua University
HsinChu 30013, Taiwan,
R.O.C.


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