Here is the abstract you requested from the IMAPS_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Thermal Mechanical Characterization of High Power GaN Packages|
|Keywords: Thermal performance, GaN, Electronic package|
|Packaging of high power GaN devices has been challenging, especially in thermal performance with strict reliability requirements. The typical package available uses a metal flange with the GaN device directly attached using solder. The metal flange, depending on the material selected, could contribute significantly to the overall thermal resistance. This paper discusses an alternative approach of packaging both single and multiple high power GaN devices. This approach adopts a heat spreader, which could potentially spread out heat more efficiently and therefore reduce overall thermal resistance. Also, the heat spreader could be an effective carrier for applications which need multiple die to meet the high power requirements. This could potentially add significant benefits to assembly, improving yields and reducing cost. However, the heat spreader could introduce significant CTE (coefficient of thermal expansion) mis-match and potential concerns in reliability. 3D finite element analysis (FEA) was conducted to characterize the thermal performance and evaluate mechanical/reliability concerns. The mechanical analysis focuses on the thermal loads of the die attach and reflow processes. Detailed results will be presented and discussed.|
|Don Willis, Staff Packaging Engineer