Abstract Preview

Here is the abstract you requested from the IMAPS_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

AUTHOR WITHDREW 9-13-11: Fabrication and Thermal Properties of Silicon Interposer BGA Package with Through Silicon Vias
Keywords: Si interposer, TSV, thermal test
AUTHOR WITHDREW 9-13-11: Silicon interposer with though silicon vias (TSV) is realized and assembled with thermal die array in a BGA package. Double-sided redistribution layers of electroplating copper are fabricated for connection between thermal die array and print circuits board (PCB). Vias filled with copper (~10000/cm2) are used as electrical connection and heat sink. Thermal resistance of this BGA package is measured and qualified according to SEMI. Results of thermal test (thermal resistance and distribution of temperature) are compared with BGA package with traditional BT substrate and simulation results. Resistance of via filled with copper is measured and calculated with the daisy chain and Kelvin structure.
Hao Zhang, Student
Tsinghua University
Beijing 100084,

  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems