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Sputter Deposition of Thin Film MIM Capacitors on LTCC Substrates for RF Bypass and Filtering Applications
Keywords: LTCC, Thin Film, Capacitor
Thin film capacitors for GHz filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) layout featuring 200 nm thick Al electrodes and a 300 nm thick Al2O3 dielectric layer, with dimensions varied between ~150x150 μm and ~750x750 μm. DC current-voltage measurements (E ≤ 5 MV/cm) coupled with impedance analysis (≤15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 MΩ) and low loss (<0.1). A second set of capacitors were made under the same experimental conditions into device geometries optimized for high frequency (≤200 MHz) impedance analysis. These capacitors featured temperature coefficient of capacitance (TCC) values between 5 and 10% as well as low loss values (<0.03). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes. *The Kansas City Plant is operated and managed by Honeywell Federal Manufacturing & Technologies for the United States Department of Energy under contract No. DENA0000622
J. Ambrose Wolf, Scientist Principal R&D
Honeywell FM&T
Kansas City, MO

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