Micross

Abstract Preview

Here is the abstract you requested from the TT_2011 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Multi Beam Grooving and Full Cut Laser Dicing of IC Wafers
Keywords: laser dicing, thin wafer, low-K grooving
The traditional blade dicing technology has gone through an impressive evolution keeping up with quality, cost and miniaturization requirements that the semiconductor technology roadmaps introduced and specified. However, since wafer technologies have dropped below 90nm node and low k materials were introduced it became clear that blade dicing evolution came to an end and expensive hybrid solutions such as combined laser grooving processes and blade dicing technologies were required to achieve the desired product reliability. Similar situations have been seen with the ongoing trend to thinner wafer that are needed for miniaturization, 3D packaging and IC performance improvements. To achieve sufficient mechanical strength, complex dicing technologies and sequences have been introduced which do not respond to the requirements for current and near future technologies. This paper will discuss the multiple beam laser dicing technology, an enabling technology that allows semiconductor manufacturers to execute the technology roadmap and continue to comply to Moore's law in an efficient manner. The multiple beam laser dicing technology has already been widely adopted by several other semiconductor technologies (e.g. RFIC, LED, T&D) and has a proven track record. The paper will address in depth the challenges and issue's that IC manufacturers are facing with respect to dicing low-K IC wafers. Main challenges are the ability to dice through fragile and brittle stack of passivations, low-k materials and metal structures. These top layers are placed on top of extreme thin silicon wafers (50-25 um) mounted on Die Attach Film (DAF) or Film Over Wire (FOW) in thickness ranges of 10 to 70 um. This paper will demonstrate how a combination and optimization of multiple beams, pulse duration and low pulse energy can meet the challenging requirements set by the industry. In addition dicing results and achieved productivities will be presented.
Jeroen van Borkulo, Customer Applications Manager
Advanced Laser Separation International (ALSI) NV
Beuningen 6641TL,
Netherlands


CORPORATE PREMIER MEMBERS
  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • NGK NTK
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems