Here is the abstract you requested from the DPC_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Ultra High 3D Capacitors Values with High Volume Efficiency and Outstanding Stability|
|Keywords: 3D High Density Capacitor , Silicon Capacitors, Passive Integration|
|IPDIA's primary effort is to develop innovative 3D technologies to integrate Passive Devices .One of their key technology drivers is the trench high-density capacitor. After introducing the 250nF/mm2 in mass production, it's now the turn to launch outstanding performances with a new worldwide record of 550nF/mm². With the advanced packaging solutions using very thin dies stacking ,combining a high level of capacitance integration and high volumetric efficiency, this achievement will enable to extend the range of high reliability Silicon Capacitor values up to 10µF in a package size 3.4mm*2.4mm*1.4mm and even smaller . This paper will provide the details to prove that the former ambitious target of 2µF/mm3 is now close to reality.|
|Catherine Bunel, R&D Director