Micross

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Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Applications
Keywords: Silicon Carbide, CMOS, Mixed signal
A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 300ºC. We have also designed and fabricated an operational amplifier and intent to present characterisation data over temperature. Initial reliability results will also be presented for parts assembled in ceramic packages and tested up to 300ºC.
Ewan P. Ramsay,
Raytheon UK
Glenrothes, Fife
UK


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