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Analog Component Development for 300ºC Sensor Interface Applications
Keywords: High Temperature Electronics, High Temperature SOI CMOS, Geothermal Sensors
The development of Enhanced Geothermal Systems (EGS) for base-load electrical power generation will require electronics for sensing and control during exploration and drilling and also during production. The operating temperature environments for these applications will generally be more extreme than those encountered by electronics currently deployed for oil and gas development and production monitoring. To address this requirement, electronic components have been designed and fabricated for operations at temperatures of 300C. These integrated circuits use silicon-on-insulator (SOI) fabrication processes to achieve high temperature operation. High-fidelity simulation models have been developed by characterization of SOI devices at 300C. These device models were employed to design components required for the development of a down-hole orientation module. A wide-bandwidth, low-noise operational amplifier has been developed for use with MEMS accelerometer sensors. A multi-channel synchronous voltage-to-frequency converter with built-in reference and oscillators has also been developed for use with 3-axis flux-gate magnetometers. The components themselves are general purpose and could easily be used for other high-temperature sensor-interface applications. This paper contains information on the target application, component requirements, design, fabrication, and test results. This material is based upon work supported by the U.S. Depatrment of Energy under award number DE-EE0002574.
Bruce W. Ohme, Semiconductor Staff Engineer
Honeywell International, Inc.
Plymouth, MN
USA


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