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High Temperature Analog-to-Digital Converter Reliability Testing
Keywords: High Temperature Electronics, High Temperature SOI CMOS, High Temperature Reliability
Initial test results have been previously reported for a high-temperature (225C) 12-bit analog-to-digital converter (HTADC12) fabricated using a production high-temperature silicon-on-insulator (SOI) CMOS process and assembled in hermetically sealed ceramic packages (ref. 1). This paper will present reliability test results for the HTADC12. This includes parametric and functional test results from 2000 hours of dynamic life test at 250C as well 1000 temperature cycles from -65C to 200C. Results of post-stress wirebond, die attach, and residual gas analysis testing are also provided. . 1. Romanko, Thomas J. and Larson, Mark R., “Test Results of the HTADC12 12 Bit Analog to Digital Converter as 250C”, Proceedings of 2009 IMAPS Hight Temperature Electronics Conference (IMAP 2009), Session 2A, pgs. 44-48.
Bruce W. Ohme, Semiconductor Staff Engineer
Honeywell
Plymouth, MN
USA


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