Abstract Preview

Here is the abstract you requested from the HiTEC_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Silicon Carbide "Super" Junction Transistors Operating at 500 ºC
Keywords: Silicon Carbide, High Temperature, High Voltage
SiC “Super” Junction Transistors (SJTs) are high current gain, majority carrier transport SiC NPN BJTs developed by GeneSiC in 1200 V -10 kV ratings. 1200 V-class, 3 mm2 active area SiC SJTs with current gains as high as 88, low on-resistance of 5.8 mΩ-cm2 and switching times of < 15 ns were recently reported. This paper is focused on the 500 °C operation of the SiC SJTs after packaging the devices in special test coupons. After fabrication, selected SJT die were attached to DBC alumina substrates with off-eutectic AuSn die-attach, which is capable of operation up to 600 °C for short durations. The die were then wire bonded using thick 10 mil Au wire bonds. Output characteristics of the packaged die were measured up to 500 °C. At temperatures ≤ 300 °C, the I-V curves show a distinct lack of a quasi-saturation region, which indicate unipolar operation mode of the SiC SJT. However, in the temperature range of 400 – 500 °C, clearly demarcated saturation and quasi-saturation regions appear in the I-V characteristics, implying a shift in operation from unipolar mode to bipolar mode. Due to an increase in ionization of the p-type acceptors in the base region, the current gain shows a negative temperature co-efficient up to 300 °C. However at > 300 °C temperatures, the current gain increases with temperature, due to an increase in carrier lifetime with temperature. Blocking voltage measurements have been performed on packaged SJT die up to 325 °C and the leakage currents at 1200 V remain below 100 µA, even at 325 °C. Switching measurements performed on the SJTs indicate temperature-independent switching transients up to 300 °C, with switching times within 20 ns. Blocking voltage and switching measurements on the SiC SJTs up to 500 °C will be presented in the full paper.
Siddarth Sundaresan,
GeneSiC Semiconductor
Dulles, VA

  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems