Here is the abstract you requested from the HiTEC_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|SiC High Temperature Operational Amplifier|
|Keywords: silicon carbide, electronics, CMOS|
|Development of silicon carbide operational amplifier offers a very attractive alternative building block for the replacement of silicon and silicon-on-insulator (SOI) analog circuits in applications where high temperature reliable operation is required. NMOS-based silicon carbide device technology was utilized to demonstrate feasibility of operational amplifiers for use in harsh environment applications. This study reports on the results of room and high temperature characterization of depletion mode and enhancement mode amplifiers and their comparison. The development of high temperature packaging and test fixtures capable to support testing of operational amplifiers at temperatures up to 300°C will be also discussed as important tools in high temperature electronics research and development.|
General Electric Global Research