Abstract Preview

Here is the abstract you requested from the HiTEC_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Development of Low RON,Diff, 12 kV, 4H-SiC GTOs for High-Power and High-Temperature Applications
Keywords: 4H-SiC GTOs, Low differential on-resistance, High-Power and High-Temperature
The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities. The 4H-SiC GTO also exhibits lower forward voltage drop than the IGBT-based switch, resulting in lower losses during normal operation. In this paper, for the first time, to our knowledge, we report our recently developed 1 x 1 cm^2, 12 kV SiC GTOs with a very low differential on-resistance (RON,Diff) of 4 mOhm-cm^2 with respect to the device active area at high injection current of 100 A or higher, which is more than 40% reduction from our previously reported work. This significant reduction in the on-resistance was attributed to an improvement of carrier lifetime in the SiC bulk region. The SiC GTO was wire-bonded and attached to a high-voltage package before the high-temperature measurement. The forward characteristics of the device were then measured using a Tektronics 371 curve tracer from room temperature (20°C) up to 400°C. Over this temperature range, the RON,Diff of the device increased modestly from 4 mOhm-cm^2 at 20°C to 4.7 mOhm-cm^2 at 400°C, while the forward voltage drop at 100 A decreased slightly from 3.97 V at 20°C to 3.6 V at 400°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current of < 1 uA was measured at a VGK of 12 kV at 20°C. A high-temperature set-up is being developed for high-voltage measurement. The blocking characteristics of the 4H-SiC GTO at high temperatures will be presented and discussed in the full paper.
Lin Cheng, Power Device Scientist
Cree, Inc.
Durham, NC

  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems