Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Development of High Dielectric Strength Ceramic Film Capacitors for Advanced Power Electronics Devices|
|Keywords: Ceramic film, Ferroelectricity, Capacitor|
|High-dielectric constant and high breakdown strength ceramic thin films hold special promise for advanced electronics applications. We deposited ferroelectric films of lanthanum doped lead zirconate titanate (PLZT) on base metal foils (film-on-foils) by chemical solution deposition. The PLZT film-on-foils were characterized over a wide temperature range between -50 and 250°C. At room temperature, we measured dielectric constant of â‰ˆ1300, dielectric loss of â‰ˆ0.05, leakage current density of â‰ˆ7 Ã— 10^-9 A/cm2, breakdown strength >2 Ã— 10^6 V/cm, and energy density of â‰ˆ85 J/cm3. A series of highly accelerated lifetime tests (HALT) was conducted to determine the reliability under high temperature and high field stress conditions. Samples were exposed to temperatures ranging from 100 to 150°C and electric fields ranging from 8.7 x 10^5 V/cm to 1.3 x 10^6 V/cm during the HALT testing. Breakdown behavior of the samples was evaluated by Weibull analysis. The mean time to failure was projected to be >3000 hr at 100°C with a dc electric field of â‰ˆ2.6 x 10^5 V/cm. The test results indicate that electronic devices with these capacitors would possess higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. Details of processing conditions, dielectric properties, and reliability analysis will be presented.|
|Beihai Ma, Materials Scientist
Argonne National Laboratory