Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Battery Chargers for Next Generation Hybrid Electric Vehicles|
|Keywords: Silicon Carbide (SiC), High Temperature Power Electronics Packaging, High Frequency|
|The packaging design and development of an on-board charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger is packaged implementing a multichip power module strategy, combining a new generation of high frequency SiC MOSFETs with integrated intelligent control bare die into a single unit. The SiC MCPM charger is capable of operating to temperatures in excess of 200 °C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present passively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50kHz switching, and measures greater than 385 cubic inches with a mass of 6.6 kg, resulting in a power density of 150W/kg. The passively cooled SiC MCPM charger the authors will present is capable of delivering a peak power of 5kW at greater than 96% efficiency, and measuring less than 50 cubic inches with a mass of 1 kg, resulting in a power density greater than 5kW/kg. Thus the novel SiC MPCM charger represents an increase in power density of more than 30Ã—, a very significant power density achievement in size and weight sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite element modeling and analysis of thermal and stress considerations, the impact of very high frequency switching and magnetics on the package design, and the development of high temperature solutions for SiC devices. This paper will also present test results of various operational scenarios of the SiC charger.|
Arkansas Power Electronics International, Inc.