Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Overlay compensation of distorted bonded-wafers using advanced photolithography system infrared metrology|
|Keywords: Through-Silicon Alignment (TSA), Infrared Metrology, Bonded-Wafer|
|This paper examines the use of a Canon FPA-5510iV stepper to measure and compensate for distortion of wafer shot-grid layout experienced by bonded and thinned wafer stacks. Given the gross shot location and intrafield error in severely distorted wafers, advanced overlay compensation methods usually reserved for front-end-of-the-line processes must be applied. Canon will introduce results demonstrating the performance of the stepper Through-Silicon Alignment (TSA) System and E-AGA function that allows for shot-specific shift, magnification and rotation correction.|
|Doug Shelton, Product Marketing Manager
San Jose, CA