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Measurement-based Signal Quality Test and Analysis of High-speed TSV Channel
Keywords: 3D Packaging, TSV , Signal Integrity
In three-dimensional integrated circuit which includes through-silicon via (TSV), vertical-interconnections provide ability to realize large number of I/Os and shorter lengths of interconnects for high bandwidth throughput. However, because there must be the limitations to increase the number of I/Os in practice, higher single-channel bandwidth is required to satisfy the industrial demands. Although TSV leads to a significant decrease of interconnect length, the received digital signal is still degraded at high operating frequency. Therefore, signal quality of high-speed TSV channel has to be tested and analyzed. In this study, data transmission characteristics of high-speed TSV channel will be discussed based on the measurement results of the fabricated test vehicles including TSVs and re-distribution layer (RDL) interconnects. Basically, the TSV channel was designed to be single-ended. The eye-diagram which directly tests the signal quality of the channel was measured up to 10 Gbps, and the S-parameter of the test vehicle was also measured to test the bandwidth of TSV channel. Even though the TSV channel is much shorter than the nominal PCB-level interconnection, the loss of TSV channel is higher than the nominal PCB-level interconnection up to several GHz range because of high capacitance of insulation-layer and lossy silicon substrate, and consequently the bandwidth of TSV channel is smaller. An impact of reflection could be neglected in TSV channel because of short length. Moreover, high resistance of TSV channel due to lossy silicon substrate attenuates the reflected wave. The considerable coupled waveform was measured at the victim line every rising and falling edges of the aggressor signal because coupling ratio is high over GHz range. Based on the measured and analyzed results, you will get the data transmission characteristics of high-speed TSV channel in time and frequency domains. They can provide the design guidance of high-speed TSV channel.
Heegon Kim,
KAIST
Daejeon, N/A
Republic of Korea


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