Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|RF/Microwave Die Attach of Gallium Nitride Devices Achieving Less Than 1% Void Free in a Flux Free Environment|
|Keywords: Void Free, Flux Free, Die Attach|
|High power devices operating at high temperatures are sources of excessive heat generation, whether the application is automotive, RF/Microwave, military, or commercial power components. Removal of this excessive heat is necessary not only for proper operation of the device, but also for the longevity and reliable performance. The attachment interface of such a high power device to the particular substrate whether metal, sapphire, ceramic, or other exotic material is critical to be essentially void free. Voids consisting of air pockets are very poor thermal conductors and would therefore jeopardize the efficient heat transfer to the heat sink or substrate. Reducing or eliminating of voids is paramount to a successful die attach and is verified by either X-Ray or SAM (scanning acoustical microscopy). Our studies consisted of soldering a Gallium Nitride die to a copper tungsten thermal spreader using an Au80Sn20 solder preform alloy. The equipment used was a dedicated vacuum/pressure reflow furnace which has the capabilities to reduce voids by using a pressure differential controlled process. Our findings will review the successful achievement of essentially void free die attach with a void level of less than 1 % as verified by X-Ray and SAM scans. As a result of not using flux and achieving a void free solder interface, long term reliability is enhanced due to the absence of corrosive flux residue which will degrade the device performance.|
|Pierino I. Zappella, Process Development Engineer