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UV Stabilization of i-line Photoresist and ARC Layer
Keywords: photostabilization, UV bake , photoresist
Thermal stabilization after lithography process is crucial in order to be able to prevent deformation of positive photoresist patterns during dry etching process. UV hardening after photoresist process is capable of minimizing negative effects of dry etching process. This paper examines optimization of the UV bake process with respect to improvement of the etch selectivity and decrease of the CD shift. The novolak based i-line photoresist and organic/inorganic anti reflective coatings are used for the lithography process. Effect of resist thickness, type of surface layer on wafer, magnitude of the critical dimension and the size of open area on the reticle used during exposure have been taken into consideration while determining optimum UV hardening process parameters.
Zeliha Yilmaz, Researcher
Tubitak Bilgem
Gebze/Kocaeli, TURKEY

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