Micross

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2D Critical Dimension Optimization of Sub-micron Patterns using an Experimantal Methodology
Keywords: Lithography, Critical Dimension, OPC
As the development of the VLSI technique with respect to the decrease in the feature sizes, critical dimension has become a vital parameter for the manufacturing. For sub-micron technologies, there has always been a significant mismatch between the layout and post lithography patterns. Since most of the conventional optimization techniques are model based, it is quite hard to obtain a good accuracy for a real-world solution. Moreover, these methods can not easily be integrated to any fabrication environment. This paper presents a layout correction technique which uses a look-up table of measured patterns with 0.3um and 0.4um critical dimensions. An interpolation method that takes the design grids into acount has been used to obtain the optimum layout for sub-micron VLSI circuits. The paper not only focuses on an experimantal and accurate critical dimension optimization, but also draws attention how to implement this methodology for any fabrication environment.
Murat Pak, Research Engineer
TUBITAK
Gebze, Kocaeli
Turkey


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