Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High Temperature Packaging for SiC Power Transistors|
|Keywords: SiC, Power, High temperature|
|In addition to increasing performance in applications where traditional Si-based components operate today, SiC-based power components are expected to be introduced into new applications where the operating environment exceed the limitations of Si systems. This could include for example oil well equipment, distributed drive systems in the automotive field or power stages for space exploration landers, where ambient temperatures can reach above 400 °C. However, expansion into these applications requires that the packaging also is adapted for the high temperature environments. Since the peak temperature limit for electronics packaging generally is around 200-250 °C and in most cases lower for long term reliability, packaging based on new materials and processes are required. We have developed a package based on a ceramic and silver for high temperature SiC power transistors. The package is tested with two types of SiC devices from different manufacturers with regards to power and temperature cycling. FEM simulations are also performed to investigate the thermo mechanical behavior of the package. The target ambient temperature of the tests is 400 °C.|