Here is the abstract you requested from the IMAPS_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Electromigration Performance of Fine Pitch Copper Pillar Interconnections|
|Keywords: Electromigration, Pillar, Interconnection|
|The miniaturization trend in electronic packaging continues at a fever pitch which drives smaller and smaller chip-to-substrate interconnections with no reduction in IC operating temperatures in sight. These two factors (current density and temperature) make the electromigration lifetime of chip-to-package interconnections a critical consideration in package design. Of particular interest these days are the so-called “fine pitch copper pillar” structures due to their very small size (30um or less). This paper presents interconnection lifetime and metallurgical data on the same which demonstrates the extreme robustness of these joints due largely to their reaching a fully reacted state in which no free solder exists in the conduction path thus providing electromigration performance like that of the base copper and intermetallic compounds that make up the interconnection in this fully reacted state. The joint resistance trends observed during stress testing are also discussed.|
|Christopher J. Berry,
Amkor Technology, Inc.