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Thermal Characterization and Modeling for System on Chip Packages
Keywords: thermal, modeling, silicon
It is important to measure and control the die temperature inside a microelectronics package because heat dissipation from the die during operation will affect its reliability. The objective of this study is to predict the silicon temperature of the System on Chip (SoC) package under various thermal loading conditions and various package configurations. The experimental thermal measurement work is based on the linear relationship of the diode I-V characteristics, i.e. using a diode as a temperature sensor. There is an on-chip thermal diode and several on-chip resistors inside a SoC package. The on-chip thermal diode is used to measure the die temperature and resistors are used to heat the die. Calibration of the SoC diode is done at temperatures ranging from 30°C to 120°C using T-type thermocouples. Using that linear equation from the calibration data, the die temperature can be determined by measuring the voltage of the SoC diode. Thermal modeling is done in FloTHERM, a 3-D computational fluid dynamics software. All experimental data are correlated to the FloTHERM model to verify the accuracy of the model and predict the SoC temperature in different use case scenarios. Both experimental data and modeling work will be presented. Data from experimentation and modeling will be the foundation for further investigation of the effects of board design and package design options for improving thermal performance.
Justin Deguzman, Student
California Polytechnic State University
San Diego, CA

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