Here is the abstract you requested from the rf_2012 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|New Developments in Die Attach Film Adhesive for RF and MW Application|
|Keywords: Die-Attach Film, DAF, FOW , MW, Stack-Chip, 3D, CTE, Thermal Interface Management|
|The new die-attach film adhesive technologies of DDAF (Dicing Die-Attach Film) and FOW ("flow over wire") are critical in enabling the efficiency and form factors in the stacked chip assembly. The advances in the stack-chip assembly have driven the development of DAF down to 10 micron in thickness while the FOW film adhesive remains in the range of 50 microns in thickness. This type of silicon on silicon stack-chip die-attach is primarily used for memory module applications. This is different from RF and Microwave die-attach film applications. They typically are on substrates with substantial difference in thermal expansion coefficient (CTE) and in most cases generate substantially more heat that requires efficient thermal and electrical interface management. This paper examines the material property criteria for the die-attach film adhesives to meet these more challenging application conditions.|
|Kevin Chung, CEO
AI Technology, Inc.
Princeton Junction , NJ