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Reliability Investigation of Various Au-In TLP Bonds
Keywords: Packaging, Die Attach, Power Semiconductors
This work is an investigation of transient liquid phase (TLP) bonding for high-temperature die-attach and packaging for wide-bandgap power semiconductors, particularly SiC. Current die attach materials bottleneck the capabilities of SiC power devices due to their temperature operation range and reliability. Traditional tin-lead solder has a melting point of only 183°C and is inadequate for the operational temperature range of SiC power devices that have been demonstrated to operate for extended periods at 500°C. Wide-bandgap device die-attach and packaging materials need a high temperature range that allows for maximum power output along with high thermal conductivity to dissipate power loss efficiently. TLP bonding surpasses these needs with a melting point 3X that of tin-lead solder to over 500°C without hazardous high lead materials common for high-temperature applications while requiring only a 200°C bonding temperature which drastically lowers peak stresses on reliability sensitive parts thus significantly increasing the packaging lifetime. Furthermore, thermal conductivity is increased 67% while the bond thickness is reduced, lowering the thermal resistance by an order of magnitude or greater. This work presents TLP bonding as a viable option for SiC power devices by characterizing several different fabricated bond structure compositions each consisting of numerous samples. The TLP structures demonstrate excellent thermal resistance and a constant physical bonding structure throughout accelerated thermal cycling. Experimental results include SEM and SAM microscopy as well as EDX elemental characterization along with static and transient thermal resistance measurement of the bonds. The results of each structural design are then compared and the advantages of each bond structure are presented.
Brian Grummel, Student
University of Central Florida
Orlando, FL

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