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Effects of Al2O3 and B2O3-SiO2 modification on the microstructure and dielectric properties of BaTiO3 ceramics
Keywords: Ceramic capacitor, Surface modification, Energy storage
Current demand for high power devices and device miniaturization in electronic systems requires multi-layer ceramic capacitors to have higher energy storage density, wide working temperature range, to endure higher working voltage and current density. This work explored the effects of Al2O3 and B2O3-SiO2 modification on the microstructure, dielectric properties and energy storage characteristic of the typical ceramic capacitor material, BaTiO3. Thin Al2O3 and B2O3-SiO2 layer was deposited on the surface of BaTiO3 particles, respectively, by soft chemical method. The microstructure and dielectric properties of the ceramics made from the modified BaTiO3 powders were investigated by TEM, dielectric spectroscopy, dielectric strength, and impedance measurement. The ceramics made from B2O3-SiO2 modified BaTiO3 (BS@BT) showed lower pore density than that of Al2O3 modified BaTiO3 (A@BT), which is attributed to accumulation of the glass phase in the grain boundary triple junction of the BS@BT ceramics. The dielectric strength of the A@BT and BS@BT ceramics was improved to 140 kV/cm and 175 kV/cm, respectively. But the dielectric constant of A@BT and BS@BT ceramics decreased about 5% and 40%, respectively, comparing with that of unmodified ceramics. An energy storage density of 2.5 J/cm3 and 3.2 J/cm3 was obtained from the A@BT and BS@BT ceramics, respectively. The mechanism of the dielectric performance improvement was discussed based on microstructure and impedance analysis.
Zhifu Liu, Assoc. Professor
Shanghai Institute of Ceramics, Chinese Academy of Sciences
Shanghai, Shanghai

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