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High Temperature 256Kbit (32Kbit x 8) HTEEPROM Reliability Testing
Keywords: High Temperature Electronics (SOI CMOS), High Temperature EEPROM, High Temperature Reliability
Results of reliability and qualification testing are presented for a commercial High Temperature EEPROM (HTEEPROM). This HTEEPROM is specified for operation at 225°C and is the highest temperature rated commercial non-volatile memory available to date. Initial test results (at 250°C) and design details have been previously reported for a prototype high-temperature 256Kbit (32Kbit x 8) EEPROM (HTEEPROM) fabricated using a production high-temperature silicon-on-insulator (SOI) 0.8 micron CMOS process (ref. 1). This paper presents reliability test results for a commercial version developed using knowledge gained from the previously reported HTEEPROM, and fabricated in the same technology. The reliability test results include data retention at 250°C, endurance (write cycling) > 100,000 cycles, parametric and functional test results for 1000 hours of dynamic life test at 250°C, 100 temperature cycles from -65°C to 200°C, ESD, Group D and residual-gas-analysis (RGA) testing. The HTEEPROM is packaged in a 56-pin ceramic pin-grid-array (PGA) package. It may be electrically configured by a control input pin for either a serial or parallel memory access. The design incorporates an on-chip timer to support periodic memory refresh to extend data retention indefinitely.
Joe G. Guimont, Sr. Design Engineer
Honeywell International
Plymouth, MN
USA


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