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High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS-Technology
Keywords: Silicon-on-Insulator (SOI), Oxide Reliability, Time-Dependent Dielectric Breakdown (TDDB)
Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. With Silicon-on-Insulator-technologies (SOI), digital and analog circuitry is possible up to 250 °C and even more, but performance and reliability are strongly affected at these high temperatures. One of the main critical factors is the gate oxide quality and its reliability. In this paper, we present a study of gate oxide capacitor time-dependent dielectric breakdown (TDDB) measurements at temperatures up to 350 °C. The experiments were carried out on gate oxide capacitor structures which were realized in the Fraunhofer 1.0 µm SOI-CMOS process. This technology is based on 200 mm wafers and features, among others, three layers of tungsten metallization with excellent reliability concerning electromigration, voltage independent capacitors, high resistance resistors, and single-poly-EEPROM cells. The gate oxide thickness is about 40 nm. Using the data of the TDDB-measurements, the behavior of field and temperature acceleration parameters at temperatures up to 350 °C was evaluated. For a more detailed investigation, the current evaluation with time was also studied. An analysis of the oxide breakdown conditions, which means especially the field and temperature dependence of the charge to breakdown and the current just before breakdown, completes the study. The presented data provide important information about accelerated oxide reliability testing beyond 250 °C in order to obtain information in short time about the reliability of high temperature CMOS-technologies at use-temperature.
Katharina Grella, Research fellow / PhD student
Fraunhofer Institute for Microelectronic Circuits and Systems IMS
Duisburg, Germany
Germany


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