Here is the abstract you requested from the HiTEN_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Sensor Interface Applications for High Temperature Precision Amplifiers|
|Keywords: Low Offset and Low Noise, high temperature electronics, Transimpedance Amplifiers|
|This paper will present the electrical performances of a new high temperature low-noise low-offset amplifier developed for high precision signal conditioning, in particular for sensor interfaces and instrumentation amplifiers. Electrical characterization of this amplifier from -55C up to 225C will be presented and discussed: in particular the low input voltage offset, lower than 50uV, and the low input integrated noise, down to 1uVpp integrated from 0.1Hz to 10Hz. The amplifier has a typical gain bandwidth product of 2.8MHz. It also features high CMRR (>80dB), input and output rail-to-rail voltage swing as well as low input (<50nA), stand-by (7uA) and quiescent currents (<2mA) at high temperature. To answer to the strong requirements in terms of size of sensor interface applications, the chip has been optimized to fit a dual amplifier in a tiny hermetically sealed Ceramic SMD package (5mmx5.5mm). Emphasis will be put on the applications of this precision amplifier in sensor interface circuits: e.g. instrumentation amplifiers for sensor capacitor or resistor bridges, low input current transimpedance amplifiers or 4-20mA current-loop transmitters. Hands-on board-level reference design for reliable operation up to 225C will be presented.|