Here is the abstract you requested from the HiTEN_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A High Temperature, Frequency Output Silicon Temperature Sensor|
|Keywords: Temperature Sensor, ASIC's, Bulk CMOS|
|Precision High Temperature sensors often require temperature compensation. Quartzdyne pressure transducers use a temperature sensitive Quartz crystal for compensation. In an effort to shrink transducer packaging, and increase reliability; a prototype frequency output temperature sensor was designed using a 0.8um silicon bulk CMOS process. The 250°C operational sensor is based on a PTAT current generator. The design uses High Temperature design techniques that have been proven reliable in prior Quartzdyne ASIC’s. The output frequency is 34kHz at 30°C, with a sensitivity of 100Hz/°C and achievable accuracy of ±0.5°C from 25°C to 225°C. This paper will review the sensor’s characteristics, including the output Linearity, Hysteresis, Accelerated aging and Temperature cycling to demonstrate the performance, long term reliability and repeatability of the sensor.|
|Shane Rose, Electrical Engineer
Salt Lake City, Utah