Here is the abstract you requested from the HiTEN_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications|
|Keywords: Silicon Carbide Power Module, High Temperature, High Frequency|
|In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge SiC multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce overvoltage/current spikes as well as resistance in the power path. Parasitic modeling and analysis was performed to determine the parasitic values of the package. Additionally, the MCPM was designed and packaged using high temperature (> 200 °C) materials including SiC power switches. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal impedance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.15 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and transconductance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. The boost converter demonstrated an efficiency of > 97% at 4 kW. An extremely low turn-on time of 10 ns was measured whereas the turn-off time was < 20 ns. The package enables a peak switching frequency of 1.2 MHz.|
|Zach Cole, Design Engineer
Arkansas Power Electronics International