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Experimental investigation of electro-thermal stress impact on SiC-BJTs electrical characteristics
Keywords: BJT, Silicon Carbide, stability
Thanks to technological improvements in the SiC sector those last years, several SiC components (MOSFET, JFET and BJT) have reached maturity and the fabrication of very high power converter operating at high temperature has become possible. However, the stability of these components is still an issue, especially for high temperature applications, and is strongly dependent on the packaging. Ageing and reliability tests have already been performed on different SiC components, such as MOSFET [4][6], JFET [1][2] and BJT [3][5]. Since we considered BJT as interesting candidates, we chose to study the stability of their characteristics on last generation components and subject them to a thorough ageing. Thus tests with electrical and thermal stresses have been performed on Transic BiTSiC 4H-SiC BJT's. Devices packaged in TO258, rated at 1200V, 20A at Tj=25°C and TjMAX=250°C) were aged during at least 10 hours either under a DC current (IC=3A) or applying a switching frequency of fSWITCH=10kHz (duty-cycle=0.5), with either a 150°C continuous thermal stress or a fast thermal cycling (1°C/s). Meanwhile, their ICE—VCE characteristics have been measured at short time intervals. Impacts of temperature on electrical characteristics both during tests and after (irreversible evolutions) have been investigated. After electro-thermal cycling, small variations on the electrical characteristics have been observed (current gain, specific on-resistance, leakage current), that’s why we think these transistors have a quite good stability in this temperature range. In the full paper, we will show 4H-SiC BJT ageing results at 250°C and compare them with results on older generations’ components.
Thibaut Chailloux,
Ampère Lab.
VILLEURBANNE, Rhone-Alpes
FRANCE


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